Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon
Identifieur interne : 000212 ( Main/Exploration ); précédent : 000211; suivant : 000213Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon
Auteurs : Sonia Ben Slama [Tunisie] ; Messaoud Hajji [Tunisie] ; Hatem Ezzaouia [Tunisie]Source :
- Nanoscale Research Letters [ 1931-7573 ] ; 2012.
Abstract
Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.
Url:
DOI: 10.1186/1556-276X-7-464
PubMed: 22901341
PubMed Central: 3497612
Affiliations:
Links toward previous steps (curation, corpus...)
- to stream Pmc, to step Corpus: 000020
- to stream Pmc, to step Curation: 000020
- to stream Pmc, to step Checkpoint: 000031
- to stream PubMed, to step Corpus: 000075
- to stream PubMed, to step Curation: 000075
- to stream PubMed, to step Checkpoint: 000075
- to stream Ncbi, to step Merge: 000076
- to stream Ncbi, to step Curation: 000076
- to stream Ncbi, to step Checkpoint: 000076
- to stream Main, to step Merge: 000217
- to stream Main, to step Curation: 000212
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon</title><author><name sortKey="Ben Slama, Sonia" sort="Ben Slama, Sonia" uniqKey="Ben Slama S" first="Sonia" last="Ben Slama">Sonia Ben Slama</name><affiliation wicri:level="1"><nlm:aff id="I1">Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050, Tunisia</nlm:aff><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050</wicri:regionArea><wicri:noRegion>2050</wicri:noRegion></affiliation></author><author><name sortKey="Hajji, Messaoud" sort="Hajji, Messaoud" uniqKey="Hajji M" first="Messaoud" last="Hajji">Messaoud Hajji</name><affiliation wicri:level="1"><nlm:aff id="I1">Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050, Tunisia</nlm:aff><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050</wicri:regionArea><wicri:noRegion>2050</wicri:noRegion></affiliation><affiliation wicri:level="1"><nlm:aff id="I2">Institut Supérieur d’Electronique et de Communication de Sfax (ISECS), Route Menzel Chaker Km 0.5, BP 868, Sfax, 3018, Tunisia</nlm:aff><country xml:lang="fr">Tunisie</country><wicri:regionArea>Institut Supérieur d’Electronique et de Communication de Sfax (ISECS), Route Menzel Chaker Km 0.5, BP 868, Sfax, 3018</wicri:regionArea><wicri:noRegion>3018</wicri:noRegion></affiliation></author><author><name sortKey="Ezzaouia, Hatem" sort="Ezzaouia, Hatem" uniqKey="Ezzaouia H" first="Hatem" last="Ezzaouia">Hatem Ezzaouia</name><affiliation wicri:level="1"><nlm:aff id="I1">Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050, Tunisia</nlm:aff><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050</wicri:regionArea><wicri:noRegion>2050</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">PMC</idno><idno type="pmid">22901341</idno><idno type="pmc">3497612</idno><idno type="url">http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3497612</idno><idno type="RBID">PMC:3497612</idno><idno type="doi">10.1186/1556-276X-7-464</idno><date when="2012">2012</date><idno type="wicri:Area/Pmc/Corpus">000020</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Corpus" wicri:corpus="PMC">000020</idno><idno type="wicri:Area/Pmc/Curation">000020</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Curation">000020</idno><idno type="wicri:Area/Pmc/Checkpoint">000031</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Checkpoint">000031</idno><idno type="wicri:source">PubMed</idno><idno type="wicri:Area/PubMed/Corpus">000075</idno><idno type="wicri:explorRef" wicri:stream="PubMed" wicri:step="Corpus" wicri:corpus="PubMed">000075</idno><idno type="wicri:Area/PubMed/Curation">000075</idno><idno type="wicri:explorRef" wicri:stream="PubMed" wicri:step="Curation">000075</idno><idno type="wicri:Area/PubMed/Checkpoint">000075</idno><idno type="wicri:explorRef" wicri:stream="Checkpoint" wicri:step="PubMed">000075</idno><idno type="wicri:Area/Ncbi/Merge">000076</idno><idno type="wicri:Area/Ncbi/Curation">000076</idno><idno type="wicri:Area/Ncbi/Checkpoint">000076</idno><idno type="wicri:doubleKey">1931-7573:2012:Ben Slama S:crystallization:of:amorphous</idno><idno type="wicri:Area/Main/Merge">000217</idno><idno type="wicri:Area/Main/Curation">000212</idno><idno type="wicri:Area/Main/Exploration">000212</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a" type="main">Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon</title><author><name sortKey="Ben Slama, Sonia" sort="Ben Slama, Sonia" uniqKey="Ben Slama S" first="Sonia" last="Ben Slama">Sonia Ben Slama</name><affiliation wicri:level="1"><nlm:aff id="I1">Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050, Tunisia</nlm:aff><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050</wicri:regionArea><wicri:noRegion>2050</wicri:noRegion></affiliation></author><author><name sortKey="Hajji, Messaoud" sort="Hajji, Messaoud" uniqKey="Hajji M" first="Messaoud" last="Hajji">Messaoud Hajji</name><affiliation wicri:level="1"><nlm:aff id="I1">Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050, Tunisia</nlm:aff><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050</wicri:regionArea><wicri:noRegion>2050</wicri:noRegion></affiliation><affiliation wicri:level="1"><nlm:aff id="I2">Institut Supérieur d’Electronique et de Communication de Sfax (ISECS), Route Menzel Chaker Km 0.5, BP 868, Sfax, 3018, Tunisia</nlm:aff><country xml:lang="fr">Tunisie</country><wicri:regionArea>Institut Supérieur d’Electronique et de Communication de Sfax (ISECS), Route Menzel Chaker Km 0.5, BP 868, Sfax, 3018</wicri:regionArea><wicri:noRegion>3018</wicri:noRegion></affiliation></author><author><name sortKey="Ezzaouia, Hatem" sort="Ezzaouia, Hatem" uniqKey="Ezzaouia H" first="Hatem" last="Ezzaouia">Hatem Ezzaouia</name><affiliation wicri:level="1"><nlm:aff id="I1">Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050, Tunisia</nlm:aff><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050</wicri:regionArea><wicri:noRegion>2050</wicri:noRegion></affiliation></author></analytic><series><title level="j">Nanoscale Research Letters</title><idno type="ISSN">1931-7573</idno><idno type="eISSN">1556-276X</idno><imprint><date when="2012">2012</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en"><p>Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.</p></div></front><back><div1 type="bibliography"><listBibl><biblStruct><analytic><author><name sortKey="Scholten, D" uniqKey="Scholten D">D Scholten</name></author><author><name sortKey="Horbelt, R" uniqKey="Horbelt R">R Horbelt</name></author><author><name sortKey="Kintzel, W" uniqKey="Kintzel W">W Kintzel</name></author><author><name sortKey="Brendel, R" uniqKey="Brendel R">R Brendel</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Fave, A" uniqKey="Fave A">A Fave</name></author><author><name sortKey="Quoizola, S" uniqKey="Quoizola S">S Quoizola</name></author><author><name sortKey="Kraiem, J" uniqKey="Kraiem J">J Kraiem</name></author><author><name sortKey="Kaminski, A" uniqKey="Kaminski A">A Kaminski</name></author><author><name sortKey="Lemiti, M" uniqKey="Lemiti M">M Lemiti</name></author><author><name sortKey="Laugier, A" uniqKey="Laugier A">A Laugier</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Gordon, I" uniqKey="Gordon I">I Gordon</name></author><author><name sortKey="Dross, F" uniqKey="Dross F">F Dross</name></author><author><name sortKey="Depauw, V" uniqKey="Depauw V">V Depauw</name></author><author><name sortKey="Masolin, A" uniqKey="Masolin A">A Masolin</name></author><author><name sortKey="Qiu, Y" uniqKey="Qiu Y">Y Qiu</name></author><author><name sortKey="Vaes, J" uniqKey="Vaes J">J Vaes</name></author><author><name sortKey="Van Gestel, D" uniqKey="Van Gestel D">D Van Gestel</name></author><author><name sortKey="Poortmans, J" uniqKey="Poortmans J">J Poortmans</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Coulthard, I" uniqKey="Coulthard I">I Coulthard</name></author><author><name sortKey="Sham, Tk" uniqKey="Sham T">TK Sham</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Tsuboi, T" uniqKey="Tsuboi T">T Tsuboi</name></author><author><name sortKey="Sakka, T" uniqKey="Sakka T">T Sakka</name></author><author><name sortKey="Ogata, Yh" uniqKey="Ogata Y">YH Ogata</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Yilan, K" uniqKey="Yilan K">K Yilan</name></author><author><name sortKey="Yu, Q" uniqKey="Yu Q">Q Yu</name></author><author><name sortKey="Zhenkun, L" uniqKey="Zhenkun L">L Zhenkun</name></author><author><name sortKey="Ming, H" uniqKey="Ming H">H Ming</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Iqbal, Z" uniqKey="Iqbal Z">Z Iqbal</name></author><author><name sortKey="Veprek, S" uniqKey="Veprek S">S Veprek</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Kezzoula, F" uniqKey="Kezzoula F">F Kezzoula</name></author><author><name sortKey="Hammouda, A" uniqKey="Hammouda A">A Hammouda</name></author><author><name sortKey="Kechouane, M" uniqKey="Kechouane M">M Kechouane</name></author><author><name sortKey="Simon, P" uniqKey="Simon P">P Simon</name></author><author><name sortKey="Abaidia, Seh" uniqKey="Abaidia S">SEH Abaidia</name></author><author><name sortKey="Keffous, A" uniqKey="Keffous A">A Keffous</name></author><author><name sortKey="Cherfi, R" uniqKey="Cherfi R">R Cherfi</name></author><author><name sortKey="Menari, H" uniqKey="Menari H">H Menari</name></author><author><name sortKey="Manseri, A" uniqKey="Manseri A">A Manseri</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Richter, H" uniqKey="Richter H">H Richter</name></author><author><name sortKey="Wang, Zp" uniqKey="Wang Z">ZP Wang</name></author><author><name sortKey="Ley, L" uniqKey="Ley L">L Ley</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Campbell, Ih" uniqKey="Campbell I">IH Campbell</name></author><author><name sortKey="Fauchet, Pm" uniqKey="Fauchet P">PM Fauchet</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Gregora, I" uniqKey="Gregora I">I Gregora</name></author><author><name sortKey="Champagnon, B" uniqKey="Champagnon B">B Champagnon</name></author><author><name sortKey="Saviot, L" uniqKey="Saviot L">L Saviot</name></author><author><name sortKey="Monin, Y" uniqKey="Monin Y">Y Monin</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Cheng Long, W" uniqKey="Cheng Long W">W Cheng Long</name></author><author><name sortKey="Wang, Fd" uniqKey="Wang F">FD Wang</name></author><author><name sortKey="Cheng Bin, W" uniqKey="Cheng Bin W">W Cheng Bin</name></author><author><name sortKey="Zhong Rong, G" uniqKey="Zhong Rong G">G Zhong Rong</name></author><author><name sortKey="Hai Lin, M" uniqKey="Hai Lin M">M Hai Lin</name></author><author><name sortKey="Shu Fan, M" uniqKey="Shu Fan M">M Shu Fan</name></author></analytic></biblStruct></listBibl></div1></back></TEI><affiliations><list><country><li>Tunisie</li></country></list><tree><country name="Tunisie"><noRegion><name sortKey="Ben Slama, Sonia" sort="Ben Slama, Sonia" uniqKey="Ben Slama S" first="Sonia" last="Ben Slama">Sonia Ben Slama</name></noRegion><name sortKey="Ezzaouia, Hatem" sort="Ezzaouia, Hatem" uniqKey="Ezzaouia H" first="Hatem" last="Ezzaouia">Hatem Ezzaouia</name><name sortKey="Hajji, Messaoud" sort="Hajji, Messaoud" uniqKey="Hajji M" first="Messaoud" last="Hajji">Messaoud Hajji</name><name sortKey="Hajji, Messaoud" sort="Hajji, Messaoud" uniqKey="Hajji M" first="Messaoud" last="Hajji">Messaoud Hajji</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Terre/explor/NickelMaghrebV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000212 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000212 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/Terre
|area= NickelMaghrebV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= PMC:3497612
|texte= Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon
}}
Pour générer des pages wiki
HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Exploration/RBID.i -Sk "pubmed:22901341" \
| HfdSelect -Kh $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd \
| NlmPubMed2Wicri -a NickelMaghrebV1
| This area was generated with Dilib version V0.6.27. |  |